AP3P9R0JB MOSFET Transistor

The AP3P9R0JB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3P9R0JB transistor as follows.

AP3P9R0JB Transistor Specification

Transistor Code		AP3P9R0JB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251S
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	63A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	54.3W
Drain-Source Capacitance		500pF
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		3V

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