AP3P7R0EJB MOSFET Transistor

The AP3P7R0EJB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3P7R0EJB transistor as follows.

AP3P7R0EJB Transistor Specification

Transistor Code		AP3P7R0EJB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251S
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	59.5W
Drain-Source Capacitance		590pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		140nS
Gate-Threshold Voltage (Maximum)		3V

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