AP3P2R2CDT MOSFET Transistor

The AP3P2R2CDT is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3P2R2CDT transistor as follows.

AP3P2R2CDT Transistor Specification

Transistor Code		AP3P2R2CDT
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PDFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	39.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0022Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		2100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		3V

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