AP3P028LM MOSFET Transistor

The AP3P028LM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3P028LM transistor as follows.

AP3P028LM Transistor Specification

Transistor Code		AP3P028LM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	7.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		185pF
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		1.2V

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