AP3P010H MOSFET Transistor

The AP3P010H is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3P010H transistor as follows.

AP3P010H Transistor Specification

Transistor Code		AP3P010H
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	58A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		415pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		73nS
Gate-Threshold Voltage (Maximum)		3V

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