AP3NR68CDT MOSFET Transistor

The AP3NR68CDT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3NR68CDT transistor as follows.

AP3NR68CDT Transistor Specification

Transistor Code		AP3NR68CDT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00068Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		2000pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		2.2V

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