AP3N3R3M MOSFET Transistor

The AP3N3R3M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3N3R3M transistor as follows.

AP3N3R3M Transistor Specification

Transistor Code		AP3N3R3M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		475pF
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		3V

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