AP3N1R8MT MOSFET Transistor

The AP3N1R8MT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3N1R8MT transistor as follows.

AP3N1R8MT Transistor Specification

Transistor Code		AP3N1R8MT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00189Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		820pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		3V

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