AP3N028EN MOSFET Transistor

The AP3N028EN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3N028EN transistor as follows.

AP3N028EN Transistor Specification

Transistor Code		AP3N028EN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23S
Transistor SMD Code		A17SS
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		3V

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