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AP3D5R0MT MOSFET Transistor

The AP3D5R0MT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3D5R0MT transistor as follows.

Circuit diagram symbol of the AP3D5R0MT transistor

AP3D5R0MT Transistor Specification

Transistor Code AP3D5R0MT
Transistor Type MOSFET
Control Channel Type N-Channel
Package PMPAK5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0115Ohm
Power Dissipation (Maximum) PD 3.13W
Drain-Source Capacitance 120pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 3V

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