AP3A010AM MOSFET Transistor

The AP3A010AM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3A010AM transistor as follows.

AP3A010AM Transistor Specification

Transistor Code		AP3A010AM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0104Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		225pF
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		3V

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