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AP3A010AM MOSFET Transistor

The AP3A010AM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3A010AM transistor as follows.

Circuit diagram symbol of the AP3A010AM transistor

AP3A010AM Transistor Specification

Transistor Code AP3A010AM
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0104Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 225pF
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 3V

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