AP3800YT MOSFET Transistor

The AP3800YT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3800YT transistor as follows.

AP3800YT Transistor Specification

Transistor Code		AP3800YT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK3X3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0108Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		105pF
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		3V

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