AP3601N MOSFET Transistor

The AP3601N is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3601N transistor as follows.

AP3601N Transistor Specification

Transistor Code		AP3601N
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23S
Transistor SMD Code		A01SS
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	2.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.095Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		3V

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