AP3310GH MOSFET Transistor

The AP3310GH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3310GH transistor as follows.

AP3310GH Transistor Specification

Transistor Code		AP3310GH
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		180pF
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		0.5V

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