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AP3310GH MOSFET Transistor

The AP3310GH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3310GH transistor as follows.

Circuit diagram symbol of the AP3310GH transistor

AP3310GH Transistor Specification

Transistor Code AP3310GH
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 180pF
Rise Time 60nS
Gate-Threshold Voltage (Maximum) 0.5V

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