AP30T10GS MOSFET Transistor

The AP30T10GS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP30T10GS transistor as follows.

AP30T10GS Transistor Specification

Transistor Code		AP30T10GS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Transistor SMD Code		30T10GS
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	44.6W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		2.5V

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