AP30T10GM MOSFET Transistor

The AP30T10GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP30T10GM transistor as follows.

AP30T10GM Transistor Specification

Transistor Code		AP30T10GM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		115pF
Rise Time		6.5nS
Gate-Threshold Voltage (Maximum)		2.5V

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