AP2R803GJB MOSFET Transistor

The AP2R803GJB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2R803GJB transistor as follows.

AP2R803GJB Transistor Specification

Transistor Code		AP2R803GJB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251S
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0028Ohm
Power Dissipation (Maximum)	PD	104W
Drain-Source Capacitance		790pF
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		3V

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