AP2P053N MOSFET Transistor

The AP2P053N is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2P053N transistor as follows.

AP2P053N Transistor Specification

Transistor Code		AP2P053N
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23S
Transistor SMD Code		A19SS
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.053Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		1.2V

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