AP2P028EM MOSFET Transistor

The AP2P028EM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2P028EM transistor as follows.

AP2P028EM Transistor Specification

Transistor Code		AP2P028EM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		160pF
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		1V

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