AP2N1K2EN1 MOSFET Transistor

The AP2N1K2EN1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2N1K2EN1 transistor as follows.

AP2N1K2EN1 Transistor Specification

Transistor Code		AP2N1K2EN1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT723
Transistor SMD Code		BSS
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		14pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V

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