AP2N050H MOSFET Transistor

The AP2N050H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2N050H transistor as follows.

AP2N050H Transistor Specification

Transistor Code		AP2N050H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Transistor SMD Code		2N050
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	14.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	17.8W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		29nS
Gate-Threshold Voltage (Maximum)		1.2V

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