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AP2N030EN MOSFET Transistor

The AP2N030EN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2N030EN transistor as follows.

Circuit diagram symbol of the AP2N030EN transistor

AP2N030EN Transistor Specification

Transistor Code AP2N030EN
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23S
Transistor SMD Code A20SS
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 65pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 1.25V

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