AP2C018LM MOSFET Transistor

The AP2C018LM is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2C018LM transistor as follows.

AP2C018LM Transistor Specification

Transistor Code		AP2C018LM
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	8.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		360pF
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		1.2V

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