AP2910EC4 MOSFET Transistor

The AP2910EC4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2910EC4 transistor as follows.

AP2910EC4 Transistor Specification

Transistor Code		AP2910EC4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WLCSP
Transistor SMD Code		2910
Drain-Source Voltage (Maximum)	VDS	24V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0225Ohm
Power Dissipation (Maximum)	PD	1.6W
Operating Junction Temperature (Maximum)		150°C
Rise Time		4000nS

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