AP2851GO MOSFET Transistor

The AP2851GO is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2851GO transistor as follows.

AP2851GO Transistor Specification

Transistor Code		AP2851GO
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TSSOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5(3.3)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04(0.08)Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		100(90)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7(6)nS

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