AP2623GY MOSFET Transistor

The AP2623GY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2623GY transistor as follows.

AP2623GY Transistor Specification

Transistor Code		AP2623GY
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT26
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	1.2W
Drain-Source Capacitance		42pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		3V

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