AP2617GY MOSFET Transistor

The AP2617GY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2617GY transistor as follows.

AP2617GY Transistor Specification

Transistor Code		AP2617GY
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT26
Transistor SMD Code		YVSS
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.038Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		1V

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