AP2609GYT MOSFET Transistor

The AP2609GYT is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2609GYT transistor as follows.

AP2609GYT Transistor Specification

Transistor Code		AP2609GYT
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PMPAK3X3
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	11.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	3.57W
Drain-Source Capacitance		305pF
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		1V

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