AP2606CMT MOSFET Transistor

The AP2606CMT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2606CMT transistor as follows.

AP2606CMT Transistor Specification

Transistor Code		AP2606CMT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0008Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		1570pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		2.2V

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