AP2603GY MOSFET Transistor

The AP2603GY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2603GY transistor as follows.

AP2603GY Transistor Specification

Transistor Code		AP2603GY
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT26
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.053Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		167pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.6nS
Gate-Threshold Voltage (Maximum)		1.2V

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