AP25N170I MOSFET Transistor

The AP25N170I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP25N170I transistor as follows.

AP25N170I Transistor Specification

Transistor Code		AP25N170I
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Transistor SMD Code		25N170
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	31.2W
Drain-Source Capacitance		225pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		5V

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