AP25N10GH MOSFET Transistor

The AP25N10GH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP25N10GH transistor as follows.

AP25N10GH Transistor Specification

Transistor Code		AP25N10GH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	96W
Drain-Source Capacitance		270pF
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		4V

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