AP2535GEY MOSFET Transistor

The AP2535GEY is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2535GEY transistor as follows.

AP2535GEY Transistor Specification

Transistor Code		AP2535GEY
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOT26
Transistor SMD Code		YUSS
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	1.13W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		1V

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