AP2532GY MOSFET Transistor

The AP2532GY is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2532GY transistor as follows.

AP2532GY Transistor Specification

Transistor Code		AP2532GY
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOT26
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.4(1.8)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13(0.25)Ohm
Power Dissipation (Maximum)	PD	1.14W
Drain-Source Capacitance		70(63)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10(9)nS

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