AP2326GN MOSFET Transistor

The AP2326GN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2326GN transistor as follows.

AP2326GN Transistor Specification

Transistor Code		AP2326GN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Transistor SMD Code		NYSS
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		55pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.5nS
Gate-Threshold Voltage (Maximum)		3V

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