AP2312GN MOSFET Transistor

The AP2312GN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2312GN transistor as follows.

AP2312GN Transistor Specification

Transistor Code		AP2312GN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS

UXPython is not the creator or an official representative of the AP2312GN MOSFET transistor. You can download the official AP2312GN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

AP2332GN-HF MOSFET Transistor CES2308 MOSFET Transistor 2SK1824 MOSFET Transistor BSR58 MOSFET Transistor FDV304P MOSFET Transistor STS3406 MOSFET Transistor IRLML6346 MOSFET Transistor 2SK1590C MOSFET Transistor AP2344GEN-HF MOSFET Transistor DMN2041L MOSFET Transistor DMN3150L MOSFET Transistor STS6N20 MOSFET Transistor XP151A13COMR MOSFET Transistor MGSF1P02 MOSFET Transistor BF513 MOSFET Transistor STS3400 MOSFET Transistor FTK2302 MOSFET Transistor IRLML9301TRPBF MOSFET Transistor IRLML6402 MOSFET Transistor CES2312 MOSFET Transistor