AP2304AGN MOSFET Transistor

The AP2304AGN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2304AGN transistor as follows.

AP2304AGN Transistor Specification

Transistor Code		AP2304AGN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Transistor SMD Code		NASS
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.117Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		62pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		3V

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