AP2303GN MOSFET Transistor

The AP2303GN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2303GN transistor as follows.

AP2303GN Transistor Specification

Transistor Code		AP2303GN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		130.4pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.2nS
Gate-Threshold Voltage (Maximum)		1V

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