AP2301EN MOSFET Transistor

The AP2301EN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2301EN transistor as follows.

AP2301EN Transistor Specification

Transistor Code		AP2301EN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23S
Transistor SMD Code		MHSS
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		1.2V

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