AP20WN170I MOSFET Transistor

The AP20WN170I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP20WN170I transistor as follows.

AP20WN170I Transistor Specification

Transistor Code		AP20WN170I
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Transistor SMD Code		20WN170
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	32.9W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		3V

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