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AP20T03GJ MOSFET Transistor

The AP20T03GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP20T03GJ transistor as follows.

Circuit diagram symbol of the AP20T03GJ transistor

AP20T03GJ Transistor Specification

Transistor Code AP20T03GJ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 12.5W
Drain-Source Capacitance 70pF
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 3V

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