AP20T03GJ MOSFET Transistor

The AP20T03GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP20T03GJ transistor as follows.

AP20T03GJ Transistor Specification

Transistor Code		AP20T03GJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	12.5W
Drain-Source Capacitance		70pF
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		3V

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