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AP1RC03GMT-HF MOSFET Transistor

The AP1RC03GMT-HF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP1RC03GMT-HF transistor as follows.

Circuit diagram symbol of the AP1RC03GMT-HF transistor

AP1RC03GMT-HF Transistor Specification

Transistor Code AP1RC03GMT-HF
Transistor Type MOSFET
Control Channel Type N-Channel
Package PMPAK5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 260A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.00099Ohm
Power Dissipation (Maximum) PD 104W
Drain-Source Capacitance 1420pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS

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