AP1A003GMT MOSFET Transistor

The AP1A003GMT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP1A003GMT transistor as follows.

AP1A003GMT Transistor Specification

Transistor Code		AP1A003GMT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	52A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0012Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		1070pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		3V

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