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AP18T10GP MOSFET Transistor

The AP18T10GP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP18T10GP transistor as follows.

Circuit diagram symbol of the AP18T10GP transistor

AP18T10GP Transistor Specification

Transistor Code AP18T10GP
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.16Ohm
Power Dissipation (Maximum) PD 28W
Drain-Source Capacitance 55pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 3V

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