AP18P10GK MOSFET Transistor

The AP18P10GK is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP18P10GK transistor as follows.

AP18P10GK Transistor Specification

Transistor Code		AP18P10GK
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		120pF
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3V

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