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AP18P10GI MOSFET Transistor

The AP18P10GI is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP18P10GI transistor as follows.

Circuit diagram symbol of the AP18P10GI transistor

AP18P10GI Transistor Specification

Transistor Code AP18P10GI
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 32V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.16Ohm
Power Dissipation (Maximum) PD 31.25W
Drain-Source Capacitance 110pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS

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