AP18P10AGJ MOSFET Transistor

The AP18P10AGJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP18P10AGJ transistor as follows.

AP18P10AGJ Transistor Specification

Transistor Code		AP18P10AGJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Transistor SMD Code		18P10AGJ
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V

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