AP18P10AGJ MOSFET Transistor

The AP18P10AGJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP18P10AGJ transistor as follows.

AP18P10AGJ Transistor Specification

Transistor Code		AP18P10AGJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Transistor SMD Code		18P10AGJ
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V

UXPython is not the creator or an official representative of the AP18P10AGJ MOSFET transistor. You can download the official AP18P10AGJ MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

FTU02N60B MOSFET Transistor SM6018NSUB MOSFET Transistor SM7A23NSUB MOSFET Transistor 2SK3366 MOSFET Transistor AP6P064J MOSFET Transistor SM1A11NSUB MOSFET Transistor 25P10 MOSFET Transistor AP01L60J-H MOSFET Transistor CS6N70_A3D-G MOSFET Transistor IRLU8721PBF MOSFET Transistor 2SJ246L MOSFET Transistor SN6F22NSUB MOSFET Transistor AP62T02GJ MOSFET Transistor CED4201 MOSFET Transistor CED05N65 MOSFET Transistor CM6N40C MOSFET Transistor CED840A MOSFET Transistor NDT5N70P MOSFET Transistor 2SJ182L MOSFET Transistor AP9563GJ MOSFET Transistor