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AP18P10AGJ-HF MOSFET Transistor

The AP18P10AGJ-HF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP18P10AGJ-HF transistor as follows.

Circuit diagram symbol of the AP18P10AGJ-HF transistor

AP18P10AGJ-HF Transistor Specification

Transistor Code AP18P10AGJ-HF
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.14Ohm
Power Dissipation (Maximum) PD 39W
Drain-Source Capacitance 115pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 16nS
Total Gate Charge 35nC

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