AP18N50W MOSFET Transistor

The AP18N50W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP18N50W transistor as follows.

AP18N50W Transistor Specification

Transistor Code		AP18N50W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		94nC

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