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AP18N20GS MOSFET Transistor

The AP18N20GS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP18N20GS transistor as follows.

Circuit diagram symbol of the AP18N20GS transistor

AP18N20GS Transistor Specification

Transistor Code AP18N20GS
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.17Ohm
Power Dissipation (Maximum) PD 89W
Drain-Source Capacitance 185pF
Rise Time 21nS
Gate-Threshold Voltage (Maximum) 4V

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